High vacuum ion plating device

Details High vacuum ion plating device High vacuum ion plating device

1974-10-03

1976-08-10

Mack, John H.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

118 491, 118 495, C23C 1500

Patent

active

039740595

ABSTRACT:
A DC high tension is impressed between an evaporation source and a holder containing a substrate to be vacuum plated. The source and substrate holder are disposed in an evaporation chamber of high vacuum. Immediately above the evaporation source, an ion chamber is formed and a voltage is impressed between a filament for electron emission and an anode for current collection. The filament and anode are disposed in the ion chamber to transfer an electron shower between them and the evaporation particles which are ionized by the electron shower.
When more than one evaporation source is employed, a high frequency coil is disposed in the coexistence region of the ionized evaporated particles generated therefrom, whereby a high frequency oscillation region is formed and thus it becomes possible to effect a chemical bond between ionized evaporated particles of different kinds.

REFERENCES:
patent: 2527747 (1950-10-01), Lewis et al.
patent: 2752882 (1956-07-01), Heimann
patent: 3192892 (1965-07-01), Hanson et al.
patent: 3316386 (1967-04-01), Yaffe et al.
patent: 3428546 (1969-02-01), Baum et al.
patent: 3437734 (1969-04-01), Roman et al.
patent: 3492215 (1970-01-01), Conant
patent: 3556048 (1971-01-01), Frazer
patent: 3583361 (1971-06-01), Laudel, Jr.
patent: 3761375 (1973-09-01), Pierce et al.
patent: 3847115 (1974-11-01), Tashbar

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