High utilization sputtering target for cathode assembly

Details High utilization sputtering target for cathode assembly High utilization sputtering target for cathode assembly

1995-02-14

1996-02-13

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 20429819, C23C 1434

Patent

active

054909147

ABSTRACT:
A sputtering target comprises a disc machined from a first piece of target grade material, having a front sputtering face and a rear face opposite. The sputtering face and target material erode during use to define a final sputtered face contour and a residual target thickness t measured from the rear face. A hub is machined from a second piece of material and is secured to the rear face of the disc. The securement device utilizes a depth of target material measured from the rear face which minimizes the thickness t in a region adjacent the hub so as to maximize the amount of the target grade material sputterable before in the region before encountering the securement device. In another form, the disc and hub are forged from a single starting slug of target grade material. The slug has an initial height to diameter ratio such that the flow lines developed in displaced target material during forging which turn upward from the disc into the hub are located at a depth of the target material measured from the rear face which also minimizes the thickness t so as to maximize the amount of the target grade material sputterable.

REFERENCES:
patent: 3741886 (1973-06-01), Urbanek et al.
patent: 4198283 (1980-04-01), Class et al.
patent: 4428816 (1984-01-01), Class et al.
patent: 4457825 (1984-07-01), Lamont, Jr.
patent: 4472259 (1984-09-01), Class et al.
patent: 4517070 (1985-05-01), Kisner
patent: 4855033 (1989-08-01), Hurwitt
patent: 5069772 (1991-12-01), Fritsche et al.
patent: 5130005 (1992-07-01), Hurwitt et al.
patent: 5284561 (1994-02-01), Shinneman et al.
patent: 5336386 (1994-08-01), Marx et al.

Affiliated with

Also associated with

Rating

High utilization sputtering target for cathode assembly does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High utilization sputtering target for cathode assembly, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High utilization sputtering target for cathode assembly will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-238718