High-transmittance attenuated phase-shift mask blank

Details High-transmittance attenuated phase-shift mask blank High-transmittance attenuated phase-shift mask blank

2005-10-06

2010-02-16

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C428S428000

Reexamination Certificate

active

07662520

ABSTRACT:
The present invention discloses a HT-AttPSM (high-transmittance attenuated phase-shift mask) blank with phase-shifters composed of the (Al2O3)x/(TiO2)1-xsuperlattice film stacks, wherein x preferably ranges 79˜84%. Particularly, the four-stacked superlattice films of the present invention perform superior optical properties including transmittance of 19.9% and a reflectance of 3.2% at the wavelength of 193 nm and an inspection transmittance less than 20% at the wavelength of 257 nm.

REFERENCES:
patent: 2003/0180630 (2003-09-01), Shiota et al.
patent: 2004/0023125 (2004-02-01), Nozawa et al.

Affiliated with

Also associated with

Rating

High-transmittance attenuated phase-shift mask blank does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-transmittance attenuated phase-shift mask blank, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-transmittance attenuated phase-shift mask blank will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4179901