High transconductance complementary (Al,Ga)As/gas heterostructur

Details High transconductance complementary (Al,Ga)As/gas heterostructur High transconductance complementary (Al,Ga)As/gas heterostructur

1988-04-28

1989-03-21

James, Andrew J.

357 16, 357 22, H01L 2702

Patent

active

048148512

ABSTRACT:
A complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which both the n-channel and p-channel transistors utilize a two-dimensional electron (hole) gas in undoped high mobility channels to form planar, complementary GaAs-based integrated circuits.

REFERENCES:
patent: 4268844 (1981-05-01), Meiners
patent: 4556895 (1985-12-01), Ohata
patent: 4566021 (1986-01-01), Yokoyama
patent: 4603469 (1986-08-01), Armiento
IEEE Electron Device Letters, Apr. 1984, pp. 129-131, by Cirillo et al.
Patent Abstracts of Japan, vol. 7, #161, Nov. 1983.
IBM Technical Disclosure Bulletin, vol. 27, No. 9, Feb. 85, pp. 5064-5066, J. Y. F. Tang et al., "GaAs Gate Field-Effect Transistor Fabrication".
IEEE Transactions on Electron Devices, vol. ED-31, No. 11, Nov. '84, pp. 1662-1667, R. Dinge, "New High-Speed III-V Devices for Integrated Circuits".
Japanese Journal of Applied Physics, vol. 24, No. 5, May '85, pp. L335-L337, K. Oe et al., "A New p-Channel AlGaAs/GaAs MIS-Like Heterostructure FET Employing Two Dimensional Hole Gas".
Katayama et al., "A New Two-Dimensional Electron Gas Field-Effect Transistor Fabricated on Undoped AlGaAs-GaAs Heterostructure", Jpn. J. Appl. Phys., vol. 23, L150-2 Mar. '84.
Solomon et al., "A GaAs Gate Heterojunction FET", IEEE Electron Device Letters, vol. 5, No. 9, Sep. '84, pp. 379-380.
Kiehl et al., "Complementary p-MODFET and n-HB MESFET (Al,Ga)As Transistors", IEEE Electron Device Letters, vol. EDL-5, No. 12, Dec. '84, pp. 521-523.
Kiehl et al., "Complementary p-MODFET and n-HB MESFET (Al,Ga)As Fets", IEDM '84, pp. 854-855.
Zuleeg et al., "Double-Implanted GaAs Complementary JFETs" IEEE Electron Device Letters, vol. EDL-5, No. 1, Jan. '84, pp. 21-23.

Affiliated with

Also associated with

Rating

High transconductance complementary (Al,Ga)As/gas heterostructur does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High transconductance complementary (Al,Ga)As/gas heterostructur, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High transconductance complementary (Al,Ga)As/gas heterostructur will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-481507