Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-11-29
2005-11-29
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S359000, C257S758000, C257S537000, C257S759000, C257S531000, C257S726000
Reexamination Certificate
active
06969903
ABSTRACT:
A resistor device structure and method of manufacture therefore, wherein the resistor device structure invention includes a plurality of alternating conductive film and insulative film layers, at least two of the conductive film layers being electrically connected in parallel to provide for high current flow through the resistor device at high frequencies with increased temperature and mechanical stability. The alternating conductive film and insulative film layers may be of a planar or non-planar geometric spatial orientation. The alternating conductive film and insulative film layers may include lateral and vertical portions designed to enable a uniform current density flow within the structure itself through a self-ballasting effect within the physical resistor. A computer aided design tool with graphical and schematic features is provided to enable generation of hierarchical parameterized cells for a resistor element with the ability to provide customization, personalization and tunability of TCR, TCR matching, and high current and ESD robustness.
REFERENCES:
patent: 4668581 (1987-05-01), Luc et al.
patent: 4866507 (1989-09-01), Jacobs et al.
patent: 5045904 (1991-09-01), Kobayashi et al.
patent: 5106461 (1992-04-01), Volfson et al.
patent: 5164699 (1992-11-01), Smith et al.
patent: 5182632 (1993-01-01), Bechtel et al.
patent: 5203731 (1993-04-01), Zimmerman
patent: 5275963 (1994-01-01), Cederbaum et al.
patent: 5841184 (1998-11-01), Li
patent: 5872695 (1999-02-01), Fasano et al.
patent: 6379745 (2002-04-01), Kydd et al.
patent: 6436814 (2002-08-01), Horak et al.
Eshun Ebenezer E.
Voldman Steven H.
Canale Anthony
Erdem Fazli
Flynn Nathan J.
International Business Machines - Corporation
Scully Scott Murphy & Presser
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