High throughput planarization etch process for interlayer oxide

Details High throughput planarization etch process for interlayer oxide High throughput planarization etch process for interlayer oxide

1996-09-06

1998-06-30

Breneman, R. Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438697, 438725, 438722, 438723, 216 38, H01L 2100

Patent

active

057733678

ABSTRACT:
A method to planarize a partially completed semiconductor integrated device includes a first process to etch a first portion of a layer of photoresist on the device, a second process to etch the remaining layer of photoresist and to etch a first portion of an oxide on the device, and a third process to etch a second portion of the oxide layer on the device. The second process achieves an etch rate of approximately 5000 .ANG. per minute and the third process achieves an etch rate of approximately 2000 .ANG. per minute. The second process etches 80% of a targeted layer of oxide and the third process etches the remaining portion of the targeted layer of oxide.

REFERENCES:
patent: 4732658 (1988-03-01), Lee
patent: 4789427 (1988-12-01), Fujimura et al.
patent: 5175127 (1992-12-01), Manning
patent: 5180689 (1993-01-01), Liu et al.
patent: 5212117 (1993-05-01), Tsuji
patent: 5447598 (1995-09-01), Mihara et al.
patent: 5525192 (1996-06-01), Lee et al.
patent: 5549784 (1996-08-01), Carmody et al.
patent: 5665203 (1997-09-01), Lee et al.

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