High throughput multi station processor for multiple single wafe

Details High throughput multi station processor for multiple single wafe High throughput multi station processor for multiple single wafe

1989-05-22

1991-01-29

Morgenstern, Norman

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118719, 118725, 118730, C23C 1650

Patent

active

049878565

ABSTRACT:
Each of a plurality of individually heated circularly located susceptors supports and heats one of a plurality of wafers within a processing chamber. An overhead gas dispersion head, vertically aligned with each susceptor, directs, in combination with downstream flow control structure, flow of a reactant gas radially uniformly across the supported wafer. A spider sequentially relocates each of the wafers, as a group, to an adjacent susceptor. Wafer handling apparatus replaces each processed wafer to provide a high production rate throughput. A source of RF energy radiating essentially primarily between each gas dispersion head and its associated susceptor provides a plasma enhanced environment and the low level intensity elsewhere within the reactor reduces residual deposits.

REFERENCES:
patent: 4539068 (1985-09-01), Takagi et al.
patent: 4693211 (1987-09-01), Ogami et al.
patent: 4767641 (1988-08-01), Kieser et al.
patent: 4798165 (1989-01-01), deBoer et al.
patent: 4825809 (1989-05-01), Mieno
patent: 4870923 (1989-10-01), Sugimoto

Affiliated with

Also associated with

Rating

High throughput multi station processor for multiple single wafe does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High throughput multi station processor for multiple single wafe, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High throughput multi station processor for multiple single wafe will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-807785