High-throughput, low-temperature process for depositing oxides

Details High-throughput, low-temperature process for depositing oxides High-throughput, low-temperature process for depositing oxides

1989-09-27

1993-03-02

Bell, Janyce

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427240, 427255, 4272553, 427294, B05D 312, C23C 1600

Patent

active

051907925

ABSTRACT:
The present invention relates to a low-pressure chemical vapor deposition (LPCVD) process for depositing silicon dioxide. In particular, the present invention describes a process involving a pre-cleaning step in which all impurities are removed from the substrate followed by a LPCVD step performed at temperatures of between 200.degree. C. and 300.degree. C. The process of the present invention is intended to replace higher temperature LPCVD and thermal processes for depositing silicon dioxide.
More particularly, the present invention involves a process in which a substrate is washed using a predetermined cleaning process. The substrate is then exposed to a dilute hydrofluoric acid solution which removes native oxide and contaminants from the surface. Next, the substrate is rinsed with, for example, de-ionized water or ultra-clean water to remove any hydrofluoric acid or other residue from the previous process steps. A layer of material, for example, silicon dioxide, is then deposited using a low-pressure chemical vapor deposition process in which the gas flow comprises silane, oxygen and nitrogen at temperatures below 300.degree. C. Oxide qualities approaching those of thermally grown oxides having been achieved.

REFERENCES:
patent: 2962394 (1960-11-01), Andres
patent: 3309760 (1967-03-01), Reznick et al.
patent: 3426422 (1969-02-01), Deal
patent: 3447238 (1969-06-01), Heynes et al.
patent: 3486951 (1969-12-01), Norby
patent: 3523819 (1970-08-01), Tokuyama et al.
patent: 4324841 (1982-04-01), Huang
patent: 4371587 (1983-02-01), Peters
patent: 4419385 (1983-12-01), Peters
patent: 4692344 (1987-09-01), Kaganowicz et al.
patent: 4708884 (1987-11-01), Chandross et al.
patent: 4737379 (1988-04-01), Hodgens et al.
J. Lee and C. Hu, "Low-Pressure Chemical Vapor Deposited Oxide Process for MOS Device Application," Dept. of Electrical Engineering and Computer Sciences, Univ. of Calif., Berkeley, Calif. 94720, 1988 Symposium on VLSI Technology (5/10-13).
B. R. Bennett, J. P. Lorenzo, K. Vaccaro and A. Davis, "Low Temperature Pyrolytic Deposition of High Quality SiO.sub.2," J. Electrochem Soc.: Solid-State Science and Technology, vol. 134, No. 10 (Oct. 1987).
J. Batey and E. Tierney, "Low-Temperature Deposition of High-Quality Silicon Dioxide by Plasma-Enhanced Chemical Vapor Deposition," J. Appl. Phys., 60 (9), pp. 3136-3145 (Nov. 1, 1986).
Richard S. Rosler "Low Pressure CVD Production Processes for Poly, Nitride, and Oxide". Solid State Technology, Apr. 1977 pp. 63-70.
William A. Brown and Theodore I. Kamins. "An Analysis of LPCVD System Parameters for Polysilicon, Silicon Nitride and Silicon Dioxide Deposition". Solid State Technology, Jul. 1979, pp. 51-57 & 84.
Werner Kern and David A. Puotinen "Cleaning Solutions Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology". RCA Review Jun. 1970, pp. 187-206.
Boyer et al. "Laser Photodeposition of Silicon Oxides and Silicon Nitrides" May 1982, Extended Abstracts, vol. 82-1 pp. 102-103.
Cobianu et al., "A Theoretical Study of the Low-Temperature Chemical Vapor Deposition of SiO.sub.2 Films", Sep. 1983, J. Electrochem. Soc.: Solid-State Science and Technology, vol. 130, No. 9, pp. 1888-1893.
J. R. Monkowski et al., "Failure Mechanism In MOS Gates Resulting From Particulate Contamination", Mar.-Apr., 1982, 20th Annual Proceedings Reliability Physics, San Diego, Calif., pp. 244-248.
Y. Avigal et al., "A New Method For Chemical Vapor Deposition of Silicon Dioxide", Aug. 8, 1974, Journal of the Electrochemical Society, vol. 121 No. 8, pp. 1103-1107.
H. Mishima et al. "Particle-Free Wafer Cleaning and Drying Technology", Aug., 1989, IEEE Transactions on Semiconductor Manufacturing, vol. 2, No. 3, pp. 69-75.
G. Gould et al. "The Influence of Silicon Surface Cleaning Procedures On Silicon Oxidation", Apr. 1987, Journal of the Electrochemical Society vol. 134, No. 4 pp. 1031-1033.

Affiliated with

Also associated with

Rating

High-throughput, low-temperature process for depositing oxides does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-throughput, low-temperature process for depositing oxides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-throughput, low-temperature process for depositing oxides will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-125580