High thermal conductivity substrate for a semiconductor device

Details High thermal conductivity substrate for a semiconductor device High thermal conductivity substrate for a semiconductor device

2011-03-22

2011-03-22

Williams, Alexander O (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257SE23141, C257SE21001, C257S712000, C257S713000, C257S717000, C257S720000, C257S707000, C257S711000, C257S704000, C257S675000, C257S668000, C257S774000, C257S680000

Reexamination Certificate

active

07911059

ABSTRACT:
A method and apparatus for packaging semiconductor dies for increased thermal conductivity and simpler fabrication when compared to conventional semiconductor packaging techniques are provided. The packaging techniques described herein may be suitable for various semiconductor devices, such as light-emitting diodes (LEDs), central processing units (CPUs), graphics processing units (GPUs), microcontroller units (MCUs), and digital signal processors (DSPs). For some embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower cavity with one or more metal layers deposited therein to dissipate heat away from the semiconductor dies. For other embodiments, the package includes a ceramic substrate having an upper cavity with one or more semiconductor dies disposed therein and having a lower surface with one or more metal layers deposited thereon for efficient heat dissipation.

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