High thermal conductivity silicon nitride circuit substrate and

Details High thermal conductivity silicon nitride circuit substrate and High thermal conductivity silicon nitride circuit substrate and

1996-09-26

2000-07-11

Turner, Archene

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Physical dimension specified

501 97, 228122, 428469, 428472, 428697, 428698, 428699, 428701, 428702, B32B 1500

Patent

active

060869909

ABSTRACT:
Disclosed are a high thermal conductivity silicon nitride circuit substrate which comprises a silicon nitride ceramic plate having a thermal conductivity at 25.degree. C. of 60 W/m.multidot.K or more and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing oxygen and at least one element selected from the group consisting of titanium, zirconium, hafnium, niobium and aluminum, and a semiconductor device using the same.

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Tsuge and Nishida, "High Strength Hot-Pressed Si.sub.3 N.sub.4 with Concurrent Y.sub.2 O.sub.3 and Al.sub.2 O.sub.3 Additions", Ceramic Bulletin, vol. 57, No. 4, 1978, pp. 424-431.
Tanaka et al, "Surface Characteristics of Metal Bondable Silicone Nitride Ceramics", Proc. of International Symposium on Ceramic Components for Engine, Japan, 1993, pp. 249-256.

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