Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Patent
1994-12-27
1997-12-16
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
257703, 257712, 501 97, 219200, H01L 2306, H01L 2312, C04B 3558, H05B 100
Patent
active
056988966
ABSTRACT:
A high thermal conductive silicon nitride structural member of the present invention contains a rare earth element in the range of 1.0 to 7.5 wt. % calculated as oxide thereof and Li, Na, K, Fe, Ca, Mg, Sr, Ba, Mn and B as impurity cationic elements in a total amount not greater than 0.3 wt. %, and has the thermal conductivity not less than 60 W/(m.K), preferably not less than 80 W/(m.K). Also, a high thermal conductive silicon nitride sintered body consists of silicon nitride particles and a grain boundary phase, a crystal compound phase in the grain boundary phase being not less than 20 vol. %, preferably not less than 50 vol. %, with respect to the entire grain boundary phase, and has the thermal conductivity not less than 60 W/(m.K), preferably not less than 80 W/(m.K). A semiconductor package of the present invention comprising a ceramic substrate on which a semiconductor chip is mounted, lead frames joined to the same surface of the ceramic substrate as on which the semiconductor chip is mounted, and bonding wires for electrically connecting the semiconductor chip and the lead frames, wherein the ceramic substrate is formed of the above high thermal conductive silicon nitride sintered body.
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Komatsu Michiyasu
Sato Yoshitoshi
Shinosawa Katsuhiro
Yamaga Mineyuki
Clark Jhihan B.
Kabushiki Kaisha Toshiba
Saadat Mahshid D.
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