High thermal conductive silicon nitride sintered body and method

Details High thermal conductive silicon nitride sintered body and method High thermal conductive silicon nitride sintered body and method

1993-09-07

1995-08-08

Jones, Deborah

Compositions: ceramic

Ceramic compositions

Refractory

501 98, 501152, 264 65, C04B 3558

Patent

active

054398568

ABSTRACT:
A high thermal conductive silicon nitride sintered body contains: 2.0-7.5% by weight of a rare earth element in terms of the amount of an oxide thereof; at most 0.3% by weight of Li, Na, K, Fe, Ca, Mg, Sr, Ba, Mn and B as impurity cationic elements in terms of total amount thereof; and, if necessary, at most 2.0% by weight of alumina and/or at most 2.0% by weight of aluminum nitride, and comprises a beta-phase type silicon nitride crystal and a grain boundary phase. The silicon nitride sintered body has a thermal conductivity of at least 60 W/m.multidot.K. Optionally, the sintered body further contains 0.2-3.0% by weight of at least one compound selected from the group consisting of the oxides, carbides, nitrides, silicides and borides of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The sintered body has a porosity of at most 1.5% by volume, a thermal conductivity of at least 60 W/m.multidot.K, and a three-point bending strength of at least 80 kg/mm.sup.2 at a room temperature. The sintered body achieves high thermal conductivity and good heat-radiating characteristics, as well as the high-strength characteristics generally inherent in silicon nitride sintered bodies.

REFERENCES:
patent: 4521525 (1985-06-01), Hsieh
patent: 4904624 (1990-02-01), Yeckley
patent: 5002907 (1991-03-01), Hayakawa et al.

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