Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1997-01-31
2000-04-04
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257412, 257413, H01L 2358, H01L 2976, H01L 2994, H01L 31062
Patent
active
060464941
ABSTRACT:
An insulating layer in a semiconductor device and a process for forming the insulating layer is described. The insulating layer comprises of a nitride layer over the substrate having a residual stress of between -8.times.10.sup.9 dynes/cm.sup.-2 and -3.times.10.sup.10 dynes/cm.sup.-2. The insulating layer can further comprise a doped oxide layer under the nitride layer and can further comprise an interlevel dielectric layer over the nitride layer. Moreover, the nitride layer can be formed by bringing the temperature in a chemical vapor deposition reactor to below 550 degrees Celsius, placing the substrate into the reactor at the temperature, and forming the nitride layer on the substrate. Alternatively, the nitride layer can be formed by pushing the substrate into a chemical vapor deposition reactor at a speed greater than 300 millimeters per minute, and forming the nitride layer on the substrate.
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Brigham Lawrence N.
Chau Robert S.
Cotner Raymond E.
Lee Yung-Huei
Intel Corporation
Meier Stephen D.
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