Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1998-04-09
1999-10-26
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257537, 338 17, 338 20, 338 71, 338 72, 338 73, 338 74, 338196, 338197, B41J 205
Patent
active
059733837
ABSTRACT:
A structure and method of making resistive emitting members which exhibit high resistivity while at the same time providing high temperature operation significantly above that known in the art. Specifically the use of nitrides of Group IVB transition metals from the periodic table, exclusive of titanium is described.
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Cole Barrett E.
Greenlaw David K.
Holmen James O.
Abraham Fetsum
Honeywell Inc.
Kau Albert K.
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