High-temperature, uncooled diode laser

Details High-temperature, uncooled diode laser High-temperature, uncooled diode laser

1993-03-30

1995-01-10

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

053814347

ABSTRACT:
A semiconductor diode laser comprising an active layer (12) having multiple compressively strained quantum wells (54) of AlGaInAs sandwiched between barriers (52) of AlGaInAs lattice-matched to InP and of a precisely defined bandgap dependent on the composition of the quantum wells. The active layer is surrounded by oppositely doped cladding layers (48, 50, 52, 58, 60) so as to form an optical waveguide. The laser very efficiently emits 1.3-.mu.m light, particularly at high operating temperatures.

REFERENCES:
patent: 5040186 (1991-08-01), Logan et al.
patent: 5251225 (1993-10-01), Eglash et al.
C. E. Zah et al., "Low threshold 1.3 .mu.m strained-layer Al.sub.x Ga.sub.y In.sub.1-x-y As quantum well lasers," Electronics Letters, Dec. 1992, vol. 28, pp. 2323-2324.
R. Bhat et al., "Low Threshold 1.3 and 1.55 .mu.m Strained Quantum Well Lasers," Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, Tsukuba, 1992, pp. 604-606 (no month).
A. Kasukawa et al., "1.5 .mu.m GaInAs/AlGaInAs Graded-Index Separate-Confinement-Heterostructure Quantum Well Laser Diodes Grown by Organometallic Chemical Vapor Deposition," Japanese Journal of Applied Physics, May 1992, vol. 31, pp. 1365-1371.
P. J. A. Thijs et al., "High Output Power (380 mW), Low Threshold Current (1.3 mA), Low Linewidth Enhancement Factor (.ltoreq.2) .lambda.=1.3 .mu.m Strained Quantum Well Lasers," Technical Digest, 1991, 17th ECOC, vol. 2, pp. 48-51 (no month).
A. Kasukawa et al., "Very low threshold current density 1.5 .mu.m GaInAs/AlGaInAs graded-index separate-confinement-heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition," Applied Physics Letters, vol. 59, pp. 2486-2488, Nov. 1991.
R. Bhat et al., "OMCVD growth of strained Al.sub.x Ga.sub.y In.sub.1-x-y As for low threshold 1.3 .mu.m and 1.55 .mu.m quantum well lasers," 4th International Conference on Indium Phosphide and Related Materials: Conference Proceedings, Newport, R.I., Apr. 21-24, 1992, pp. 453-456.

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