Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1998-11-13
2000-12-26
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
257348, 257349, 257350, 257351, 257352, 257353, 257354, 257355, 257382, 257383, 257384, H01L 2900
Patent
active
061647810
ABSTRACT:
Electromigration in the source and drain conductors of a semiconductor device is reduced by increasing the cross-sectional areas of these conductors in accordance with an increase in a magnitude of current, thereby enabling the semiconductor device to operate at high temperatures.
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McKitterick John Burt
Tsang Joseph Cheung-Sang
Abraham Fetsum
Allied-Signal Inc.
Yeadon Loria B.
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