High temperature transducers and methods of manufacturing

Details High temperature transducers and methods of manufacturing High temperature transducers and methods of manufacturing

1985-02-28

1988-04-19

Broome, Harold

Electrical resistors

Strain gauge type

338 5, 29610SG, G01L 122

Patent

active

047392983

ABSTRACT:
A high temperature transducer consists of a first section having a base layer of monocrystalline silicon which layer is coated with an oxide. A thin layer of a high temperature glass is sputtered on the oxide layer of the base layer. A second section is formed by diffusing a wafer of N type silicon to form a p+ layer. The first and second sections are bonded together by an anodic bond where the p+ layer is secured to the glass layer to form a composite structure. The N type material is then removed and piezoresistive deivces are formed in the p+ layer. This structure provides a high temperature transducer which exhibits stable operating parameters over a wide operating range.

REFERENCES:
patent: 3654579 (1972-04-01), Kurtz et al.
patent: 3800262 (1974-03-01), Cinquin
patent: 3930823 (1976-01-01), Kurtz et al.
patent: 4236137 (1980-06-01), Kurtz et al.
patent: 4400869 (1983-08-01), Wilner et al.

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