High temperature transducers and methods of fabricating the same

Details High temperature transducers and methods of fabricating the same High temperature transducers and methods of fabricating the same

1991-05-02

1992-11-24

Woodiel, Donald O.

Measuring and testing

Fluid pressure gauge

Diaphragm

296211, 73708, 73721, 73777, 73862474, 338 4, G01L 906

Patent

active

051652838

ABSTRACT:
There is disclosed an apparatus and structure for a pressure transducer employing silicon carbide and utilizing p-type SiC as a diaphragm with n-type mesa SiC force sensing resistors integrally formed on the surface of the diaphragm. The p-type SiC diaphragm is positioned on top of an annular ring of silicon which is formed from a silicon wafer utilized as the supporting wafer for the process. The structure depicted is a given conductivity SiC diaphragm having opposite conductivity SiC resistors positioned thereon and fabricated by processing techniques utilizing selective etching properties of SiC.

REFERENCES:
patent: 4320664 (1982-03-01), Rehn et al.
patent: 4994781 (1991-02-01), Sahagen

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