Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Reexamination Certificate
2008-07-29
2008-07-29
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
C257SE21351, C438S054000
Reexamination Certificate
active
07405457
ABSTRACT:
A high temperature NTC thermistor includes a polycrystalline thermistor body, selected from a list consisting of polycrystalline Si with intrinsic conductivity and polycrystalline Ge with intrinsic conductivity. At least one ohmic contact is disposed on at least one surface of the polycrystalline thermistor body.
REFERENCES:
patent: 3374404 (1968-03-01), Luecke
patent: 3568125 (1971-03-01), Villemant et al.
patent: 3629585 (1971-12-01), Desvignes et al.
patent: 3745503 (1973-07-01), Bethe
patent: 3881181 (1975-04-01), Khajezadeh
patent: 3936789 (1976-02-01), Matzen
patent: 4009482 (1977-02-01), Nakata
patent: 4035757 (1977-07-01), Einthoven et al.
patent: 4047436 (1977-09-01), Bernard et al.
patent: 4063210 (1977-12-01), Collver
patent: 4276535 (1981-06-01), Mitsuyu et al.
patent: 4359372 (1982-11-01), Nagai et al.
patent: 4586829 (1986-05-01), Hübner et al.
patent: 4772866 (1988-09-01), Willens
patent: 5037766 (1991-08-01), Wang
patent: 5066938 (1991-11-01), Kabashi et al.
patent: 5081438 (1992-01-01), Nakahata et al.
patent: 5141334 (1992-08-01), Castles
patent: 5172211 (1992-12-01), Godinho et al.
patent: 5183530 (1993-02-01), Yamazaki
patent: 5446437 (1995-08-01), Bantien et al.
patent: 5924996 (1999-07-01), Cho et al.
patent: 5969238 (1999-10-01), Fischer
patent: 6023978 (2000-02-01), Dauenhauer et al.
patent: 6077228 (2000-06-01), Schonberger
patent: 6122704 (2000-09-01), Hass
patent: 6316770 (2001-11-01), Ouvrier-Buffet
patent: 6319429 (2001-11-01), Moos et al.
patent: 6354736 (2002-03-01), Cole et al.
patent: 6380840 (2002-04-01), Weinand et al.
patent: 6433666 (2002-08-01), Inoue et al.
patent: 6744346 (2004-06-01), Akram et al.
patent: 6863438 (2005-03-01), Pannek et al.
patent: 2002/0179992 (2002-12-01), Parson
patent: 2002/0190337 (2002-12-01), House et al.
Wolf, Stanley, et al, “Silicon Processing for the VLSI Era,” vol. 1, Second Edition, copyright 2000, Lattice Press, pp. 5-28.
Wolf, Stanley, et al, “Silicon Processing for the VLSI Era,” vol. 1, Second Edition, copyright 2000, Lattice Press, pp. 842-845.
Docket No. 007729.P001 U.S. Appl. No. 10/846,055, Office Action dated Aug. 18, 2006, 7 pages.
Docket No. 007729.P001 U.S. Appl. No. 10/846,055, Final Offfice Action dated Jan. 23, 2007, 11 pages.
Docket No. 007729.P001 U.S. Appl. No. 10/846,055, Notice of Allowance dated Apr. 19, 2007, 7 pages.
Docket No. 007729.P001 U.S. Appl. No. 10/846,055, Notice of Allowance dated Sep. 13, 2007, 10 pages.
Docket No. 007729.P001C U.S. Appl. No. 11/788,441, Office Action dated Dec. 14, 2007, 8 pages.
Docket No. 007729.P001C U.S. Appl. No. 11/788,441, Notice of Allowance dated May 8, 2008, 6 pages.
Docket No. 007729.P002 U.S. Appl. No. 11/014,408, Office Action dated May 2, 2006, 7 Pages.
Docket No. 007729.P002 U.S. Appl. No. 11/014,408, Office Action dated Oct. 18, 2005, 6 pages.
Docket No. 007729.P002 U.S. Appl. No. 11/014,408, Office Action dated Aug. 15, 2006, 12 pages.
Docket No. 007729.P002 U.S. Appl. No. 11/014,408, Notice of Allowance dated Jun. 8, 2007, 6 pages.
Docket No. 007729.P002 U.S. Appl. No. 11/014,408, Notice of Allowance dated Jan. 23, 2007, 5 pages.
AdSem, Inc.
Blakely , Sokoloff, Taylor & Zafman LLP
Budd Paul A
Jackson Jerome
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