Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1990-03-16
1992-07-21
Ryan, Patrick J.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505701, 505702, 505703, 505704, 428688, 428698, 428701, 428930, B32B 900
Patent
active
051322820
ABSTRACT:
A HTSC layered structure comprising a substrate such as sapphire, a strontium titanate buffer layer and a HTSC film such as YBa.sub.2 Cu.sub.3 O.sub.7 provides a superconductor having lower surface resistance and a narrower transition temperature.
REFERENCES:
Multilayer YBa.sub.2 Cu.sub.3 O.sub.x -SrTiO.sub.3 --YBa.sub.2 Cu.sub.3 O.sub.x Films for Insulating Crossovers, Kingston et al., Applied Physics Letters, Jan. 8, 1990.
YBa.sub.2 Cu.sub.3 O.sub.7 Films Grown on Epitaxial MgO Buffer Layers on Sapphire, Talvacchio et al., Proceedings M.sup.2 S-HTSC, Stanford, Jul. 1989, Physica.
The Sputter Deposition and Characterization of Epitaxial Magnesium Oxide Thin Films and Their Use as a Sapphire/YBCO Buffer Layer, Morris et al., Proc. M.A.S. vol. 169, 1990.
Properties of Epitaxial YBa.sub.2 Cu.sub.3 O.sub.7 Thin Films on Al.sub.2 O.sub.3 (1012), Char et al., Appl. Phys. Lett. 56(8) Feb. 19, 1990, pp. 785-787.
Materials Research Bulletin, vol. 23, No. 8, Aug. 1988, pp. 1159-1162 Hu et al.
Journal of the Less Common Metals, vol. 151, pp. 333-340, Chambonnet et al. May 15, 1989.
Applied Physics Letters, vol. 55, No. 3, Jul. 17, 1989, pp. 295-297 Witanachchi et al.
Char Kook-rin
Newman Nathan
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