Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1990-08-13
1992-07-14
Ryan, Patrick J.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505701, 505702, 505703, 505704, 428426, 428433, 428688, 428901, 428930, B32B 900
Patent
active
051302942
ABSTRACT:
A HTSC layered structure comprising a substrate such as calcium titanate and a HTSC film such as YBa.sub.2 Cu.sub.3 O.sub.7. Use of a thin buffer layer of calcium titanate on sapphire provides a YBa.sub.2 Cu.sub.3 O.sub.7-x film with higher critical current.
REFERENCES:
Multilayer YBa.sub.2 Cu.sub.3 O.sub.x -SrTiO.sub.3 -YBa.sub.2 Cu.sub.3 O.sub.x Films for Insulating Crossovers, Kingston et al., Applied Physics Letters, Jan. 8, 1990.
YBa.sub.2 Cu.sub.3 O.sub.7 Films Grown on Epitaxial MgO Buffer Layers on Sapphire, Talvacchio et al., Proceedings M.sup.2 S-HTSC, Stanford, Jul. 1989, Physica.
The Sputter Deposition and Characterization of Epitaxial Magnesium Oxide Thin Films and Their Use as a Sapphire/YBCO Buffer Layer, Morris et al., Proc. M.A.S., vol. 169, 1990.
Properties of Epitaxial YBa.sub.2 Cu.sub.3 O.sub.7 Thin Films on Al.sub.2 O.sub.3 (1012), Char et al., Appl. Phys. Lett. 56(8), 19 Feb. 1990, pp. 785-787.
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