Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2008-01-29
2008-01-29
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S034000, C257S036000, C257S039000, C257SE39014
Reexamination Certificate
active
07323711
ABSTRACT:
A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer (5) that defines the size of the ramp-edge junction and a second electrode layer (6). The width of the second electrode layer (6) is greater than the width of the first electrode layer (5). The first electrode layer (5) and the second electrode layer (6) touch in part, and are separated via a first insulation layer (7) in remaining part. Because the ramp-edge junction includes the first electrode layer (5) and the second electrode layer (6), the inductance of the ramp-edge junction can be reduced with the critical current density Jcbeing kept at a high level.
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Ito et al; “The improvement of the characteristics of ramp-edge junctions with interface modified barriers”; Superconductor Science and Technology, vol. 14, 2001, pp. 1052-1055.
Horibe Masahiro
Suzuki Hideo
Tanabe Keiichi
Fujitsu Limited
International Superconductivity Technology Center, the Juridical
Tran Minh-Loan
Westerman, Hattori, Daniels & Adrian , LLP.
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