Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-07-28
1990-07-10
Ryan, Patrick
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505702, 505703, 505704, 428688, 428700, 428704, 428930, 427 62, 427 69, 4273722, 427375, 156 89, 156614, B32B 900
Patent
active
049406930
ABSTRACT:
The use of a highly stable, lattice-matched barrier layer grown epitaxially on a suitable substrate, and permitting the subsequent epitaxial growth of a thin high-temperature superconducting film with optimized properties.
REFERENCES:
Glass Bonded Composites etc. Nies et al, Mat. Res. Bull., pp. 623-630, 19 8.
AuCoin Thomas R.
Finnegan John J.
Shappirio Joel R.
Gordon Roy E.
Ryan Patrick
The United States of America as represented by the Secretary of
Zelenka Michael
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