High temperature superconducting memory storage device and cryot

Details High temperature superconducting memory storage device and cryot High temperature superconducting memory storage device and cryot

1988-03-09

1991-12-03

Gossage, Glenn

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

505701, 505782, 365160, 365161, 307245, 307277, 307306, H01L 3912, H01L 3918, G11C 1144

Patent

active

050700707

ABSTRACT:
Binary memory storage devices and cryotrons utilizing superconducting crystals exhibiting an onset of superconductivity and a relatively weak flux exclusion at a temperature T1 and the onset of relatively strong flux exclusion at T2, where T1>T2>77K, are controlled by dc magnetic fields. The preferred superconducting crystals have the formula Bi.sub.2 Sr.sub.3-z Ca.sub.z Cu.sub.2 O.sub.8+w wherein z is from about 0.1 to about 0.9 and w is greater than zero but less than about 1.

REFERENCES:
patent: 4164030 (1979-08-01), Kupriyanov et al.
Michel et al., Zeitschrift fur Physik B-Condensed Matter 68, 421-423 (1987).
Maeda et al., Japanese Journal of Applied Physics 27, 209-210 (1988).
Subramanian et al, "A New High Temperature Supeconductor: Bi.sub.2 Sr.sub.3-x Ca.sub.x Cu.sub.2 O.sub.8+y ", Science, Feb. 26, 1988, pp. 1015-1017.
Brus, "Superconductivity--A Revolution Beckons in Microelectronics", Microwaves & RF, Jul. 1987, pp. 35-43.
Polturak et al, Physical Review, B, No. 36, Oct. 1987, pp. 5586-5587.

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