Semiconductor device manufacturing: process – Having superconductive component
Patent
1996-08-08
1998-06-23
Niebling, John
Semiconductor device manufacturing: process
Having superconductive component
505193, 505922, 505923, H01B 1200
Patent
active
057704708
ABSTRACT:
The invention relates to a high temperature superconducting electric field effect device which creates a dual grain boundary on a superconducting thin film and employs it as a channel. The device comprises a substrate, a bottom layer formed on a predetermined region of the bottom layer, a dual grain boundary channel region formed on the bottom layer, a high temperature source and a drain formed at both end portions of the channel region on the substrate, a high temperature superconducting thin film channel layer formed a predetermined region on the source, the drain and the substrate, dual grain boundaries formed on the high temperature superconducting thin film channel layer, and a gate insulating layer formed on the dual grain boundary channel region.
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Suh Jeong-Dae
Sung Gun-Yong
Booth Richard A.
Electronics and Telecommunications Research Institute
Niebling John
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