High temperature superconducting electric field effect device an

Semiconductor device manufacturing: process – Having superconductive component

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505193, 505922, 505923, H01B 1200

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active

057704708

ABSTRACT:
The invention relates to a high temperature superconducting electric field effect device which creates a dual grain boundary on a superconducting thin film and employs it as a channel. The device comprises a substrate, a bottom layer formed on a predetermined region of the bottom layer, a dual grain boundary channel region formed on the bottom layer, a high temperature source and a drain formed at both end portions of the channel region on the substrate, a high temperature superconducting thin film channel layer formed a predetermined region on the source, the drain and the substrate, dual grain boundaries formed on the high temperature superconducting thin film channel layer, and a gate insulating layer formed on the dual grain boundary channel region.

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Large electric field effects in YBa.sub.2 Cu.sub.3 O.sub.7-8 films containing weak links, J. Mannhart, J. Strobel, J.G. Bednorz and Ch. Gerber pp. 630-632, Feb., 1993.
Electric Field Effects on YBa.sub.2 CU.sub.3 O.sub.7-8 Grain Boundary Josephson Junctions, Kensuke Nakajima, Kazuki Yokota, Jian Chen, Hiroaki Myoren and Tsutomu Yamashita, vol. 33(1994) pp. L934-L937, Jul., 1994.

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