Measuring and testing – Specimen stress or strain – or testing by stress or strain... – Specified electrical sensor or system
Reexamination Certificate
2011-06-21
2011-06-21
Kirkland, III, Freddie (Department: 2855)
Measuring and testing
Specimen stress or strain, or testing by stress or strain...
Specified electrical sensor or system
Reexamination Certificate
active
07963171
ABSTRACT:
A ceramic strain gage based on reactively sputtered indium-tin-oxide (ITO) thin films is used to monitor the structural integrity of components employed in aerospace propulsion systems operating at temperatures in excess of 1500° C. A scanning electron microscopy (SEM) of the thick ITO sensors reveals a partially sintered microstructure comprising a contiguous network of submicron ITO particles with well defined necks and isolated nanoporosity. Densification of the ITO particles was retarded during high temperature exposure with nitrogen thus stabilizing the nanoporosity. ITO strain sensors were prepared by reactive sputtering in various nitrogen/oxygen/argon partial pressures to incorporate more nitrogen into the films. Under these conditions, sintering and densification of the ITO particles containing these nitrogen rich grain boundaries was retarded and a contiguous network of nano-sized ITO particles was established.
REFERENCES:
patent: 3805601 (1974-04-01), Jeffers
patent: 5141330 (1992-08-01), Gregory et al.
patent: 5163220 (1992-11-01), Zeto et al.
patent: 5251981 (1993-10-01), Kreider
patent: 5338566 (1994-08-01), Gregory et al.
patent: 5375474 (1994-12-01), Moore, Sr.
patent: 5627637 (1997-05-01), Kapteyn
patent: 5780727 (1998-07-01), Gimzewski et al.
patent: 5861558 (1999-01-01), Buhl et al.
patent: 5915285 (1999-06-01), Sommer
patent: 6427539 (2002-08-01), Chen et al.
patent: 6429417 (2002-08-01), Street et al.
patent: 6521966 (2003-02-01), Ishio et al.
patent: 6584857 (2003-07-01), Furlani et al.
patent: 6729187 (2004-05-01), Gregory
patent: 2005/0115329 (2005-06-01), Gregory et al.
patent: WO02/23517 (2002-05-01), None
Dyer et al, “Preparation and piezoresistive properties of reactively sputtered indium tin oxide thin films”, Thin Solid Films 288, 1996, pp. 279-286.
Gregory et al, “An apparent n to p transition in reactively sputtered indium-tin-oxide high temperature strain gages”, Thin Solid Films 405, 2002, pp. 263-269.
Gregory et al, “High temperature stability of indium tin oxide thin films”, Thin Solid Films 406, 2002, pp. 286-293.
Gregory et al, “A self-compensated ceramic strain gage for use at elevated temperatures”, Sensors and Actuators A 88, 2001, pp. 234-240.
NASA Aerospace Propulsion and Power Program NRA-01-GRC-02 Ceramic Strain Gages for Use at Temperatres up to 1500C Annual Technical Report, Dec. 2001-Oct. 2002, pp. 1-25.
Cahill et al., “Thermometry and Thermal Transport in Micro-Nanoscale Solid-State Devices and Structures”, Journal of Heat Transfer, Apr. 2002, vol. 124, pp. 223-241.
Cahill et al., “Nanoscale thermal transport”, Journal of Applied Physics, Jan. 15, 2003, vol. 93, No. 2, pp. 793-818.
Gregory Otto J.
You Tao
Board of Governors for Higher Education, State of Rhode Island a
Gauthier & Connora LLP
Kirkland, III Freddie
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