Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2011-02-22
2011-02-22
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Reexamination Certificate
active
07893510
ABSTRACT:
A high temperature-stable sensor is provided in which electrodes on a substrate or an insulation layer are in contact with a sensitive layer, wherein the electrodes have platinum, rhodium, or iridium or an electrically conductive oxide layer. For this purpose, an intermediate product is provided as a platform chip, which has a deposited layer made of platinum, rhodium, or iridium or an alloy of platinum, rhodium, or iridium and is covered by an electrically conductive oxide. From the deposited layer, a conductive structure is formed and thus a platform chip is created with an electrically conductive structure subject to external influences. This structure has an electrically conductive oxide and/or its parts have long-term, stable characteristic resistance curves under high-temperature loading above about 500° C., especially between about 600° C. and 950° C. A sensor with a gas-sensitive layer formed as a gas-sensitive sensor is preferred.
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German translation of JP Examination Report issued Sep. 24, 2010 in counterpart JP Application No. JP 2005-204890. (Partial English Translation attached).
Ullrich Karlheinz
Wienand Karlheinz
Fahmy Wael M
Heraeus Sensor Technology GmbH
Panitch Schwarze Belisario & Nadel LLP
Salerno Sarah K
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