High temperature-stabile silicon boron carbide nitride...

Details High temperature-stabile silicon boron carbide nitride... High temperature-stabile silicon boron carbide nitride...

2006-12-12

2006-12-12

Barts, Samuel (Department: 1621)

Organic compounds -- part of the class 532-570 series

Organic compounds

Silicon containing

Reexamination Certificate

active

07148368

ABSTRACT:
The present invention concerns a process for producing silylalkylboranes containing the structural feature Si—C—B, new molecular silylalkylboranes, new molecular silyalkylborazines, new oligoborocarbosilazanes and polyborocarbosilazanes, a process for their production and their use as well as silicon boron carbide nitride ceramics and a process for their production.

REFERENCES:
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patent: WO 01 53304 (2001-07-01), None
McMullen, (Rearrangement in Borane Adducts of Trimethylsilylmethylenedimethylsulfurane, Inorganic Chemistry, vol. 9, No. 10 1970, 2291-2295).
Kiesgen, Jutta et al., “A further contribution to the stabilization of iminoboranes RB.tplbond.nr,” Chem. Ber. vol. 126, No. 7, 1993, pp. 1559-1563.

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