Coherent light generators – Particular temperature control – Heat sink
Patent
1994-04-28
1995-09-26
Bovernick, Rodney B.
Coherent light generators
Particular temperature control
Heat sink
372 34, H01S 3043
Patent
active
054540020
ABSTRACT:
A semiconductor laser device, and method for making such, having higher operating temperatures than previously available. A semiconductor epitaxial layer is bonding to a cleaving assembly which allows the epitaxial layer to be manipulated without use of traditional substrate forms. The resulting semiconductor laser is bonded to a metal portion which serves as a heat sink for dissipating heat from the active lasing region. The resulting semiconductor lasers can be cooled by thermoelectric cooling modules, thus eliminating the necessity of using more bulky cryogenic systems.
REFERENCES:
patent: 4620307 (1986-10-01), Kappeler
patent: 4943971 (1990-07-01), Fiet et al.
patent: 4997792 (1991-03-01), McClurg
patent: 5028563 (1991-07-01), Feit et al.
patent: 5260960 (1993-11-01), Amann et al.
J. C. Dyment et al., "Continuous Operation of GaAs Junction Lasers on Diamond Heat Sinks at 200.degree.K", 1 Nov. 1967. Appl. Phys. Let. 11, (9) pp. 292-294.
H. Holloway and E. M. Logothesis, "Epitaxial Growth of Lead Tin Telluride", J. Appl. Phys., 1970, 41, p. 3543. (Jul.).
R. Eng, J. F. Butler, K. J. Linden, "Tunable Diode Laser Spectroscopy: An Invited Review", Optical Engineering, Nov./Dec. 1980, vol. 19, No. 6, pp. 945-960.
Y. Horikoshi, M. Kawashima, and H. Saito, "PbSnSeTe-PbSeTe Lattice-Matched Double Heterostructure Lasers", Japanese J. Appl. Phys., 1982, 21, p. 77. (Jan.).
J. A. Sell, "Tunable Diode Laser of Carbon Monoxide in Engine Exhaust", SPIE, 1983, 438, p. 67. (no month).
J. E. Butler, N. Bottka, R. S. Sillman, D. K. Gaskill, "In Situ, Real-Time Diagnostics of OMVPE Using IR-Diode Laser Spectroscopy", J. Crystal Growth, 1986, 77, p. 163. (no month).
R. Rosman, A. Katzir, P. Norton, K. H. Bachem, and H. Preier, "On the Performance of Selenium Rich Lead-Salt Heterostructure Diode Lasers with Remote p-n Junction", IEEE J. Quantum Electronics QE-23, 94 (1987). Jan.
U. Lachish, S. Rotter, E. Adler, U. El-Hanany, "Tunable Diode Laser Based Spectroscopic System for Ammonia Detection in Human Respiration", Rev. Sci. Instrum., 1987, 58, p. 923. (Jun.).
P. J. McCann, J. Fuchs, Z. Feit and C. G. Fonstad, "Phase Equilibria and Liquid Phase Epitaxy Growth of PbSnSeTe Lattice Matched to PbSe", J. Appl. Phys. 62, 2994 (1987). (Oct. 1).
A. Shahar and A. Zussman, "PbSnTe-PbTeSe Lattice Matched Single Heterostructure Diode Lasers Grown By LPE On A (110) Oriented PbSnTe Substrates", Infrared Phys., vol. 27, No. 1, pp. 45-47, 1987. (No month).
H. Preier, Z. Feit, J. Fuchs, D. Kostyk, W. Jalenak, and J. Sproul, "Status of Lead Salt Laser Development at Spectra-Physics", presented at the Second International Symposium on Monitoring of Gaseous Pollutants by Tunable Diode Lasers, Nov. 1988. (Nov. 28).
V. M. Bermudez, R. L. Rubinovitz, and J. E. Butler, "Study of the Vibrational Modes of Subsurface Oxygen on Al (111) Using Diode Laser Infrared Reflection-Absorption Spectroscopy", J. Vac. Sci. Technol. A, vol. 6, No. 3, May/Jun. 1988, pp. 717-721.
B. Spanger, U. Schiessl, A. Lambrecht, H. Bottner, and M. Tacke, "Near-Room-Temperature Operation of Pb.sub. -xSr.sub.X Se Infrared Diode Lasers Using Molecular Beam Epitaxy Techniques", Appl. Phys. Lett., 1988, 53, p. 2582. (Dec. 26)
M. Loewenstein, "Diode Laser Harmonic Spectroscopy Applied to In Situ Measurements of Atmospheric Trace Molecules", J. Quant. Spectros. Radiat. Transfer, 1988, 40, p. 249-256. (no month).
U.S. Ser. No. 07/367,459, entitled "A Chemical Method for the Modification of Substrate Surface to Accomplish Heteroepitaxial Cryustal Growth", by P. J. McCann and C. G. Fonstad, filed Jun. 16, 1989.
E. Yablonovitch, E. Kapon, T. J. Gmitter, C. P. Yun and R. Bhat, "Double Heterostructure GaAs/AlGaAs Thin Film Diode Lasers on Glass Substrates", IEEE Photonics Technology Letters, vol. 1, No. 2, Feb. 1989, p. 41.
Z. Feit, D. Kostyk, R. J. Woods, and P. Mak, "Single-Mode Molecular Beam Epitaxy Grown PbEuSeTe/PbTe Buried Heterostructure Diode lasers for Co.sub.2 High-Resolution Spectroscopy", Appl. Phys. Lett., 1991, 58, p. 343-345. (Jan. 28th).
R. M. Scheck and D. L. Wall, "Medical Diagnostics with TDLs", PhotonicsSpectra, Jan. 1991, p. 110-112.
P. J. McCann, "The Role of Substrate Surface Reactions in Heteroepitaxy of PbSe on BaF.sub.2 ", Mat. Res. Soc. Symp. Proc., 221, 1991, pp. 289-293. (No month available).
P. J. McCann and C. G. Fonstad, "Liquid Phase Epitaxial Growth of PbSe on (111) and (100) BaF.sub.2 ", Journal of Crystal Growth, 114, 1991, pp. 687-692. (No month Available).
P. J. McCann and C. G. Fonstad, "Auger Electron spectroscopic Analysis of Barium Fluoride Surfaces Exposed to Selenium Vapor", Journal of Electronic materials, vol. 20, No. 11, 1991, pp. 915-920. (no month Available).
C. Camperi-Ginestet, M. Hargis, N. Jokerst, and M. Allen, "Alignable Epitaxial Liftoff of GaAs Materails with Selective Deposition Using Polymide Diaphragms", IEEE Transactions Photonics Technology Letters, vol. 3, No. 12, Dec. 1991, pp. 1123-1126.
W. K. Chan, D. M. Shah, T. J. Gmitter and C. Caneau, "Inverted Gate GaAs Mesfet By Epitaxial Liftoff", Electronics Letters, 9th Apr. 1992, vol. 28, No. 8, p. 708.
R. Zucca, M. Zandian, J. M. Arias, and R. V. Gil, "HgCdTe Double Heterostructure Diode Lasers Grown by Molecular Beam Epitaxy", J. Vac. Sci. Technol., 1992, B 10, p. 1587-1593. (Aug. 25).
D. E. Cooper and R. U. Martinelli, "Near-Infrared Diode Lasers Monitor Molecular Species", Laser Focus World, Nov. 1992, pp. 133-146.
J. J. Callahan, K. P. Martin, T. J. Drabik, B. B. Quimby and C. Fan, "Alignable LiftoffTransfer of Device Arrays Via A Single Polymeric Carrier Membrane", Electronics letters, 27th May 1992, vol. 29, No. 11, pp. 951-953.
M. Wolverton and B. Ables, "The Use of Capillary Action Measurements for Solderability Improvement", TI Technical Journal, Jul.-Aug. 1993, pp. 18-28.
G. Lu and E. BOrchelt, "CVD Diamond Boosts Performance of Laser Diodes", Photonics Spectra, Sep. 1993, pp. 88-91.
P. J. McCann, "The Effect of Composition Dependent Lattice Strain on the Chemical Potential of Tellurium in Pb.sub.1-x Sn.sub.x Se.sub.1-y Te.sub.y Quaternary Alloys", Mat. Res. Soc. Symp. Proc., vol. 311, 1993, pp. 149-153.
P. J. McCann, "Growth of PbSe.sub.0.78 Te.sub.0.22 Lattice-Matched with BaF.sub.2 ", Thin Solid Films, 227, 1993, pp. 185-189. (No month).
F. Agahi, Kei May Lau, Arvind Baliga, David Loeber and Neal Anderson, "Photo-Pumped Strained-Barrier Quantum Well Lasers Fabricated by Epitaxial Liftoff", presented at 1993 International Semiconductor Device Research Symposium, pp. 415-418. (no month).
G. S. Matijasevic, C. C. Lee and C. Y. Wang, "Au-Sn Alloy Phase Diagram and Properties Related To Its Use as a Bonding Medium", Thin Solid Films, 223, 1993, pp.-276-287. (No month).
A. Ravid and A. Zussman, "Laser Action and Photoluminescence in an Indium-Doped n-type Hg.sub.1-x Cd.sub.x Te (x=0.375) Layer Grown by Liquid Phase Epitaxy", J. Appl. Phys., 1993, 73, p. 3979-3987. (Apr. 15).
P. J. McCann and D. Zhong, "Liquid Phase Epitaxy Growth of Pb.sub.1-x Sn.sub.x Se.sub.1-y Alloys Lattice Matched with BaF.sub.2", J. Appl. Phys., 75 (2) 15 Jan. 1994, pp. 1-6.
Bovernick Rodney B.
McNutt Robert
The Board of Regents of the University of Oklahoma
LandOfFree
High temperature semiconductor diode laser does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High temperature semiconductor diode laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High temperature semiconductor diode laser will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1556772