High temperature semiconductor devices having at least one galli

Details High temperature semiconductor devices having at least one galli High temperature semiconductor devices having at least one galli

1989-07-07

1991-01-15

James, Andrew J.

357 20, 357 16, 357 30, H01L 29161, H01L 2972, H01L 2714

Patent

active

049857428

ABSTRACT:
A device having high temperature operating characteristics is provided by depositing n-type cubic gallium nitride on n-type cubic silicon carbide to provide an ohmic contact or electrode. High temperature operating characteristics are also provided in a device having a pn heterojunction between a layer of cubic p-type silicon carbide or gallium arsenide and a first layer of cubic n-type gallium nitride. In a power transistor, a second layer of n-type gallium nitride is deposited on the other surface of the silicon carbide or gallium arsenide to form a pn heterojunction. The gallium nitride layer that is connected as an emitter is forward biased to cause electron injection into the silicon carbide or gallium arsenide layer. In a phototransistor device having high temperature operating characteristics, a transparent layer of cubic n-type gallium nitride is deposited on each side of either cubic p-type silicon carbide or gallium arsenide. Small electrodes are connected to the gallium nitride to minimize blockage of radiation. The radiation passes through either or both gallium nitride layers and across the pn junction to generate a potential between the electrodes. Direction-sensing and position-sensing devices having high temperature and high photon energy operating characteristics are also provided using layers of silicon carbide or gallium arsenide, and gallium nitride.

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