Chemistry of inorganic compounds – Oxygen or compound thereof – Metal containing
Patent
1991-07-25
1992-10-13
Mintel, William
Chemistry of inorganic compounds
Oxygen or compound thereof
Metal containing
357 4, 357 59, 357 67, 423446, 437176, 437178, 437177, 437175, H01L 2948
Patent
active
051555590
ABSTRACT:
A semiconductor device comprising a semiconducting diamond layer, (e.g. single crystal or polycrystalline), a refractory metal silicide layer adjacent the diamond layer for forming a rectifying contact therewith, and an annealed interface region between the diamond layer and the refractory metal silicide layer. The annealed interface region is preferably a non-abrupt interface comprising material selected from the group consisting of silicon carbide, the carbide of the refractory metal and mixtures thereof. The present invention also provides a method for making a rectifying contact on a semiconducting diamond layer comprising the steps of forming a refractory metal silicide on the diamond layer, and annealing the refractory metal silicide and diamond layer. Preferably, the step of annealing comprises the step of heating the diamond layer and refractory metal silicide at temperature of at least about 450.degree. C.
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Das Kalyankumar
Humphreys Trevor P.
Nemanich Robert J.
Sahaida Scott R.
Thompson, Jr. Dale G.
Kobe Steel U.S.A. Inc.
Mintel William
North Carolina State University
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