High temperature refractory metal contact in silicon integrated

Details High temperature refractory metal contact in silicon integrated High temperature refractory metal contact in silicon integrated

1995-01-18

1996-06-18

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257751, 257763, 257767, 257770, 257382, 257383, 257384, H01L 2348, H01L 2940

Patent

active

055280811

ABSTRACT:
A contact and interconnect structure for a semiconductor integrated circuit includes a thin layer of refractory metal on a contact surface of the substrate through an opening in an overlying insulation layer with boron ions implanted into the substrate through the layer of refractory metal and the contact surface to ensure a uniform ohmic contact. An interconnect structure is then formed on the insulation layer and on the thin layer of refractory metal including a first layer of a refractory metal nitride on the insulation layer, a second layer of refractory metal on the first layer of refractory metal nitride, and a second layer of refractory metal nitride on the second layer of refractory metal.

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patent: 5202579 (1993-04-01), Fujii et al.

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