High temperature refractory metal contact assembly and multiple

Details High temperature refractory metal contact assembly and multiple High temperature refractory metal contact assembly and multiple

1977-04-28

1979-05-08

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29577, 29578, 29589, B01J 1700

Patent

active

041528239

ABSTRACT:
A multi-layer integrated semiconductor circuit interconnection structure with a first layer formed of a refractory metal sandwich including outer layers of silicon and a core of refractory metal providing a high temperature low ohmic contact assembly, an insulating layer formed on the first layer, and a patterned metal layer formed on the insulating layer to interconnect with the refractory layer and semiconductor device to provide an integrated circuit assembly.

REFERENCES:
patent: 3461361 (1969-08-01), Delivorias
patent: 3614547 (1971-10-01), May
patent: 3667008 (1972-05-01), Katnack

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