High temperature refractory metal contact assembly and multiple

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 23, 357 59, 357 41, H01L 2348, H01L 2978, H01L 2702, H01L 2904

Patent

active

040429539

ABSTRACT:
A multi-layer integrated semiconductor circuit interconnection structure with a first layer formed of a refractory metal sandwich including outer layers of silicon and a core of refractory metal providing a high temperature low ohmic contact assembly, an insulating layer formed on the first layer, and a patterned metal layer formed on the insulating layer to interconnect with the refractory layer and semiconductor device to provide an integrated circuit assembly.

REFERENCES:
patent: 3475234 (1969-10-01), Kerwin et al.
patent: 3614547 (1971-10-01), May
patent: 3667008 (1972-05-01), Katnack

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High temperature refractory metal contact assembly and multiple does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High temperature refractory metal contact assembly and multiple , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High temperature refractory metal contact assembly and multiple will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-364979

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.