High temperature refractory metal contact assembly and multiple

Details High temperature refractory metal contact assembly and multiple High temperature refractory metal contact assembly and multiple

1975-06-10

1977-08-16

Wojciechowicz, Edward J.

357 23, 357 59, 357 41, H01L 2348, H01L 2978, H01L 2702, H01L 2904

Patent

active

040429539

ABSTRACT:
A multi-layer integrated semiconductor circuit interconnection structure with a first layer formed of a refractory metal sandwich including outer layers of silicon and a core of refractory metal providing a high temperature low ohmic contact assembly, an insulating layer formed on the first layer, and a patterned metal layer formed on the insulating layer to interconnect with the refractory layer and semiconductor device to provide an integrated circuit assembly.

REFERENCES:
patent: 3475234 (1969-10-01), Kerwin et al.
patent: 3614547 (1971-10-01), May
patent: 3667008 (1972-05-01), Katnack

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