High temperature refractory metal contact assembly and multiple

Details High temperature refractory metal contact assembly and multiple High temperature refractory metal contact assembly and multiple

1979-02-22

1981-05-05

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

204192S, 204192M, 357 71, 427 96, 427 90, H01L 2188

Patent

active

042659353

ABSTRACT:
A multi-layer integrated semiconductor circuit interconnection structure with a first layer formed of a refractory metal sandwich including outer layers of silicon and a core of refractory metal providing a high temperature low ohmic contact assembly, an insulating layer formed on the first layer, and a patterned metal layer formed on the insulating layer to interconnect with the refractory layer and semiconductor device to provide an integrated circuit assembly.

REFERENCES:
patent: 3463715 (1969-08-01), Bloom
patent: 3573570 (1971-04-01), Cunningham
patent: 3614547 (1971-10-01), May
patent: 3667008 (1972-05-01), Katnack
patent: 3785862 (1974-01-01), Grill
patent: 3833842 (1974-09-01), Cunningham
patent: 3862017 (1975-01-01), Tsunemitsu et al.
patent: 4152823 (1979-05-01), Hall
Oikawa et al., "Molybdenum Metallization System . . .", Review of the Electrical Communication Laboratories, 24, No. 5-6, pp. 407-417, May-Jun., 1976.

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