High temperature rectifying contact including polycrystalline di

Details High temperature rectifying contact including polycrystalline di High temperature rectifying contact including polycrystalline di

1992-11-02

1995-01-24

Loke, steven Ho Yin

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257485, 257280, 257764, 257768, H01L 2348, H01L 2352

Patent

active

053844700

ABSTRACT:
A rectifying contact including a refractory metal carbide layer on a polycrystalline diamond layer provides high temperature operation and may be included in semiconductor devices, such as diodes and field effect transistors. The refractory metal carbide layer forms a substantially chemically non-reactive interface with the polycrystalline diamond. A single layer of substantially stoichiometric proportions of the refractory metal layer is provided in one embodiment of the rectifying contact. Another embodiment includes a second metal-rich refractory metal carbide layer on the stoichiometric layer. Yet another embodiment includes a carbon-rich refractory metal layer between the stoichiometric layer and the polycrystalline diamond layer. A metal field effect transistor including the rectifying contact may also be fabricated. A method for making the rectifying contact includes depositing a layer, or layers, of the refractory metal carbide on the polycrystalline diamond, as contrasted with a solid state reaction to form the refractory metal carbide. Another method includes depositing the polycrystalline diamond on a refractory metal carbide layer.

REFERENCES:
patent: 4982243 (1991-01-01), Nakahata et al.
patent: 5087322 (1992-02-01), Lillienfeld et al.
patent: 5155559 (1992-10-01), Humphreys et al.
patent: 5294814 (1994-03-01), Das
Geis et al., "High-Temperature Point-Contact Transistors and Schottky Diodes Formed on Synthetic Boron-Doped Diamond", IEEE Electron Device Letters, vol. EDL.-8, No. 8, pp. 341-343, Aug. 1987.
Gildenblat et al., "High Temperature Schottky Diodes with Boron-Doped Homoepitaxial Diamond Base", Mat. Res. Bul., vol. 25, pp. 129-134 (1990).
Shiomi et al., "Characterization of Boron-Doped Diamond Epitaxial Films and Applications for High-Voltage Schottky Diodes and MESFET's ", New Diamond Science and Technology, 1991 MRS Int. Conf. Proc., pp. 975-980.

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