Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – To compound semiconductor
Patent
1991-07-25
1993-05-18
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
To compound semiconductor
257472, 257 77, 257627, 437176, H01L 2948
Patent
active
052124010
ABSTRACT:
A rectifying contact for use at high temperatures including a monocrystalline semiconducting diamond layer on a substrate and a heteroepitaxial metal layer thereon. The metal layer has a lattice match with the diamond and is deposited on the diamond substantially in atomic registry therewith. The metal and diamond form a rectifying contact which has good mechanical adhesion and provides stable rectifying operation at elevated temperatures. The metal layer may be formed by deposition in an ultra-high vacuum. In alternate embodiments, the metal layer may be formed on a monocrystalline semiconducting diamond substrate or on at least one monocrystalline diamond area of a textured polycrystalline layer.
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Lurie & Wilson, "The Diamond Surface", Surface Science, 65(1977), pp. 453-511.
Pickett & Erwin, "Electronic structure of an ideal diamond nickel (001) interface", Physical Review B, vol. 41, pp. 9756-9764 (1990).
Pavlidis, "The Growth of Epitaxial Thin Nickel Films on Diamond", Thin Solid Films, 42(1977), pp. 221-226.
Das Kalyankumar
Humphreys Trevor P.
Nemanich Robert J.
Hille Rolf
Kobe Steel USA Inc.
North Carolina State University
Tran Minhloan
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