High temperature pressure sensor with low parasitic capacitance

Details High temperature pressure sensor with low parasitic capacitance High temperature pressure sensor with low parasitic capacitance

1986-10-30

1987-10-20

Griffin, Donald A.

Electricity: electrical systems and devices

Electrostatic capacitors

Variable

H01G 700

Patent

active

047018267

ABSTRACT:
A silicon variable capacitance pressure sensor has two silicon wafers. The first wafer has a first capacitor plate contacting a highly doped first semiconductor path through the first wafer. The second wafer has a second capacitor plate contacting a highly doped second semiconductor path through the second wafer. An insulating layer is attached to the first and second wafers for preventing electrically conductive coupling between the first and second wafers, thereby reducing parasitic capacitance between the first and second semiconductor paths.

REFERENCES:
patent: 4177496 (1979-12-01), Bell et al.
patent: 4184189 (1980-01-01), Davis et al.
patent: 4207604 (1980-06-01), Bell
patent: 4261086 (1981-04-01), Giachino et al.
patent: 4345299 (1982-08-01), Ho
patent: 4386453 (1983-06-01), Giachino et al.
patent: 4390925 (1983-06-01), Freud
patent: 4415948 (1983-11-01), Grantham et al.
patent: 4420790 (1983-12-01), Golke et al.
patent: 4424713 (1984-01-01), Kroninger, Jr. et al.
patent: 4586109 (1986-04-01), Peters et al.
patent: 4609966 (1986-09-01), Kuisma

Affiliated with

Also associated with

Rating

High temperature pressure sensor with low parasitic capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High temperature pressure sensor with low parasitic capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High temperature pressure sensor with low parasitic capacitance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1615781