High temperature power supply

Details High temperature power supply High temperature power supply

2005-09-27

2005-09-27

Riley, Shawn (Department: 2838)

Electric power conversion systems

Current conversion

Including d.c.-a.c.-d.c. converter

C363S131000

Reexamination Certificate

active

06950317

ABSTRACT:
A high-temperature, regulated power supply uses wide band gap transistors to drive a Royer circuit. Pulses output from the Royer circuit are gated through a pulse width modulator to control the duty cycle of wide band gap transistors that drive an output transformer. The output of the transformer is rectified and filtered to provide the regulated D.C. output voltage. Regulation is accomplished by sampling the output voltage, comparing it to a reference voltage and using the difference between the output voltage and the reference voltage to control the pulse width modulator. High temperature operability is provided by using wide band gap transistors and iron or steel core transformers. This technique also provides a radiation hard assembly.

REFERENCES:
patent: 4344122 (1982-08-01), Jones
patent: 6215680 (2001-04-01), Rolston
Jim Williams; “Measurements on CCFL-Driver Ciucuits Pose”; EDN Access Website for Design, by Design; Design Feature: May, 1996; ppgs 1-6.
EDN Access Website for Design, by Design Department Newsletter, “Signals & Noise”, Nov. 21, 1996; ppgs 1-3.
Ranbir Singh. James Richmond; “SIC Power Schottky Diodes in Power Factor Correction Circuits”; Cree, Inc. Application Note; CPWR-AN01 Rev; ppgs 1-9.
Jim Richmond; “Hard Switched Silicon IGBT's?, Cut Switching Losses in Half with Silicon Carbide Schottky Diodes”; Cree, Inc. Application Note; CPWR-AN03 Rev; ppgs 1-9.
Agarwal, Sing, Ryu, Richmond, Capell, Schwab, Moore, Palmour; “600 V, 1-40A, Schottky Diodes in SiC and Their Applications”; Cree, Inc., CPWR-AN02 Rev; ppgs 1-9.

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