High temperature plasma-assisted diffusion

Details High temperature plasma-assisted diffusion High temperature plasma-assisted diffusion

1999-07-01

2001-04-24

Chaudhuri, Olik (Department: 2814)

Coating apparatus

Gas or vapor deposition

With treating means

C257S618000, C029S025010

Reexamination Certificate

active

06221165

ABSTRACT:

BACKGROUND OF THE INVENTION
The invention relates generally to semiconductor integrated circuits, and more particularly, to an apparatus and method for fabricating a spherical-shaped semiconductor device.
Conventional semiconductor devices, or “chips,” are formed from a flat surface semiconductor wafer. The semiconductor wafer is first manufactured in a semiconductor material manufacturing facility and is then provided to a fabrication facility. At the latter facility, several layers are processed onto the semiconductor wafer surface. Once completed, the wafer is then cut into one or more chips and assembled into packages. Although the processed chip includes several layers fabricated thereon, the chip still remains relatively flat. One processing step that is performed in the fabrication facility is thermal diffusion. Traditional thermal diffusion is based on three process steps. First of all, a doping oxide is deposited on the wafer. Next, thermal diffusion is performed on the wafer substrate, typically at a temperature between 900° C. to 1200° C. to prevent warpage and detrimental stress to the wafer. After thermal diffusion, the doping oxide is removed. The depth of diffusion depends on several factors, including the crystal orientation of the substrate. On a flat wafer, the crystal orientation is relatively consistent.
In co-pending U.S. Pat. No. 5,955,776, filed on May 16, 1997, assigned to the same assignee as the present application and hereby incorporated by reference, a method and apparatus for manufacturing spherical-shaped semiconductor integrated circuit devices is disclosed. Being spherical-shaped, the crystal orientation of the devices differs for each portion of the device. The present invention is specific to an apparatus and method for performing a consistent, high-temperature diffusion on devices such as those that are spherical in shape.
SUMMARY OF THE INVENTION
The present invention, accordingly, provides an apparatus and method for performing thermal diffusion on the substrate of a device such as a spherical shaped semiconductor. To this end, one embodiment provides an enclosure containing a plurality of apertures and a plasma chamber. A plasma generator for producing a plasma torch is incorporated with the plasma chamber, the plasma generator including a conductor coil electrically connected to a radio frequency (RF) energy generator. A first conduit registering with a first opening in the enclosure allows the semiconductor devices to be received into the plasma chamber. A second conduit registering with a second opening in the enclosure allows the semiconductor devices to exit the plasma chamber. Processing fluids are injected into the plasma chamber so that a doping material from the process fluid is ionized at an upper portion of the plasma torch to form a high density diffusion plasma. This high density diffusion plasma supports a quick and uniform diffusion of the doping material into the substrate of the semiconductor devices.
In another embodiment, the semiconductor devices and/or the processing fluids are preheated in a preheat section. By preheating the semiconductor devices, the surfaces of the devices are better suited to accept the doping material. By preheating the processing fluids, the doping material contained in the fluid is quicker to ionize by the plasma torch.


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U.S. Ser. No. 09/033,180, filed on Mar. 2, 1998, entitledInductively Coupled Plasma Powder Vaporization for Fabricating Integrated Circuits, Ivan Herman Murzin, Abstract and 2 sheets of drawings.
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