High temperature photovoltaic cell

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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136256, 136262, 357 30, 357 72, 357 65, 357 67, H01L 31068, H01L 310304

Patent

active

051164272

ABSTRACT:
A photovoltaic device utilizing compound semiconductor materials that are stable when operated at high temperatures. Hostile environments, and in particular, thermally stressful environments such as those generated by use of light concentrating systems, require encapsulation of the device. Sealing of the photo-active junction, the conductive grid, the exposed semiconductor surfaces, and the pads contacting the grid away from the junction area provide such thermal stability. A heterojunction structure can be used along with barrier materials providing a conductive grid in contact with the photo-active surface thereby reducing interdiffusion of that surface with the conductive grid.

REFERENCES:
patent: 3436549 (1969-04-01), Pruett
patent: 3982964 (1976-09-01), Lindmayer et al.
patent: 4126930 (1978-11-01), Moon
patent: 4158717 (1979-06-01), Nelson
patent: 4197141 (1980-04-01), Bozler et al.
patent: 4227941 (1980-10-01), Bozler et al.
patent: 4278704 (1981-07-01), Williams
patent: 4359487 (1982-11-01), Schneider
patent: 4366338 (1982-12-01), Turner et al.
patent: 4367368 (1983-01-01), Wolf
patent: 4547622 (1985-10-01), Fan et al.
patent: 4593152 (1986-06-01), Yamazaki
patent: 4623751 (1986-11-01), Kishi et al.
patent: 4889565 (1989-12-01), Fan et al.
Solar Cells: "Stable Silicon Solar Cells with High Temperature Survivability" by Tandon et al.; vol. 20, No. 3; Apr. 1987; pp. 177-186.
Applied Physics Letters; "Efficient AlGaAs Shallow-Homojunction Solar Cells" by Gale et al.; vol. 44, No. 6; Mar. 1984; pp. 632-634.
Journal of the Electrochemical Society; "Use of Plasma-Deposited Si.sub.3 N.sub.4 as an Oxidation Mask in the Fabrication of GaAs Shallow-Homojunction Solar Cells"; by Turner et al.; vol. 131, No. 5; May 1984; pp. 1211-1213.
IEEE Transactions on Electron Devices; "Investigation of Titanium Nitride Layers for Solar Cell Contacts"; by Von Seefeld et al.; vol. ED.-27, No. 4; Apr. 1980; pp. 873-876.
Werthen, J. G. Hamacker, H. C., Virshup, G. F. Lewis, C. R., and Ford, C. W. "High Efficiency AlGaAs-GaAs Cassegrainan Contractor Cells" NASA Conference Publication 2408:61-68 (Apr. 30, 1985).
M. A. Nicolet and M. Bartur "Diffusion Barriers in Layered Contact Structures" J. Vac. Sci. Technol., vol. 19: 786 (1981).
Horne, W. E., et al., "High Temperature Contact Metallization for Advanced Solar Cells," Final Report on Contract AFWAL-TR-84-2044 AFWAL/POOC Wright Patterson Air Force Base, Ohio (Sep. 81-Apr. 84).
DeSalvo, Gregory C. Ervin H. Mueller, & Allen M. Barnett "N/P GaAs Concentrator Solar Cells w/an Improved Grid & Busbar Contact Design," NASA Conference Publication 2408:51-59 (Apr. 30-May 2, 1985).
Basore, P. A. "Optimum Grid-Line Patterns for Concentrator Solar Cells Under Nonuniform Illumination" IEEE Photovoltaic Conference Record 84CH2019-8: 637-642, (May 1-4, 1984).
M. F. Zhu et al., Thin Solid Films, vol. 119, pp. 5-9 (1984).

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