High temperature microelectromechanical (MEM) devices

Details High temperature microelectromechanical (MEM) devices High temperature microelectromechanical (MEM) devices

2007-08-30

2010-10-12

Williams, Hezron (Department: 2856)

Measuring and testing

Liquid analysis or analysis of the suspension of solids in a...

Viscosity

Reexamination Certificate

active

07810379

ABSTRACT:
A microelectromechanical (MEM) device per the present invention comprises a semiconductor wafer—typically an SOI wafer, a substrate, and a high temperature bond which bonds the wafer to the substrate to form a composite structure. Portions of the composite structure are patterned and etched to define stationary and movable MEM elements, with the movable elements being mechanically coupled to the stationary elements. The high temperature bond is preferably a mechanical bond, with the wafer and substrate having respective bonding pads which are aligned and mechanically connected to form a thermocompression bond to effect the bonding. A metallization layer is typically deposited on the composite structure and patterned to provide electrical interconnections for the device. The metallization layer preferably comprises a conductive refractory material such as platinum to withstand high temperature environments.

REFERENCES:
patent: 6872319 (2005-03-01), Tsai
patent: 2004/0113513 (2004-06-01), Borwick et al.
patent: 2008/0238446 (2008-10-01), DeNatale et al.

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