High temperature methods for enhancing retention...

Details High temperature methods for enhancing retention... High temperature methods for enhancing retention...

2007-04-27

2010-11-23

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185020, C365S185280, C365S201000

Reexamination Certificate

active

07839695

ABSTRACT:
Methods are described for improving the retention of a memory device by execution of a retention improvement procedure. The retention improvement procedure comprises a baking process of the memory device in a high temperature environment, a verifying process of the memory device that checks the logic state of memory cells, and a reprogramming process to program the memory device once again by programming memory cells in a 0-state to a high-Vt state. The baking step of placing the memory device in a high temperature environment causes a charge loss by expelling shallow trapped charges, resulting in the improvement of retention reliability.

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