High temperature lift-off process

Details High temperature lift-off process High temperature lift-off process

1989-10-06

1991-04-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437944, 148DIG100, 148DIG75, H01L 21312, H01L 2147

Patent

active

050064886

ABSTRACT:
Disclosed is a process for forming a pattern of metallization on a processed semiconductor substrate, under high temperature conditions, employing a polyimide precursor material as a lift-off layer. Advantageously, the material is photosensitive, and, after exposure and development, the portions of the layer remaining on the substrate can be completely and readily removed with conventional solvents.

REFERENCES:
patent: Re30186 (1980-01-01), Rubner et al.
patent: 3934057 (1976-01-01), Moreau et al.
patent: 4040831 (1977-08-01), Rubner
patent: 4087569 (1978-05-01), Hatzakis
patent: 4428796 (1984-01-01), Milgram
patent: 4451971 (1984-06-01), Milgram
patent: 4542090 (1985-09-01), Lewis
patent: 4606998 (1986-08-01), Clodgo et al.
patent: 4645734 (1987-02-01), Takada et al.
patent: 4659650 (1987-04-01), Moritz et al.
patent: 4741988 (1988-05-01), Van der Zande et al.
patent: 4777119 (1988-10-01), Brault et al.
patent: 4786569 (1988-11-01), Rohde et al.
patent: 4877718 (1989-10-01), Moore et al.
patent: 4886573 (1989-12-01), Watanabe et al.
patent: 4886734 (1989-12-01), Moore et al.
Homma, Y. et al., "Polyimide Lift-Off Technology for High-Density LSI Metallization", IEEE Transactions on Electron Devices, vol. Ed. -28, No. 5 (May 1981), pp. 552-556.
Frary, J. M. et al., "Lift-Off Techniques for Fine Line Metal Patterning", Semiconductor International (Dec. 1981), pp. 72-85.
Rohde, O. et al., "High Resolution, High Photospeed Polyimide for Thick Film Applications", Solid State Technology (Sep. 1986).

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