Superconductor technology: apparatus – material – process – High temperature devices – systems – apparatus – com- ponents,... – Josephson junction – per se or josephson junction with only...
Patent
1993-04-30
1995-03-21
Crane, Sara W.
Superconductor technology: apparatus, material, process
High temperature devices, systems, apparatus, com- ponents,...
Josephson junction, per se or josephson junction with only...
257 31, 257 33, 505 1, 505702, 505729, 505329, H01L 3922
Patent
active
053998812
ABSTRACT:
A hysteretic high-T.sub.c trilayer Josephson junction, and a method of forming the same are disclosed. The junction includes lower and upper high T.sub.c superconducting cuprate films separated by a barrier layer, where the thin films each include a molecular junction layer adjacent the barrier layer which is characterized by a high-T.sub.c cuprate stoichiometry and crystal structure, and a flat two-dimensional surface, as evidenced by its electron diffraction pattern using reflected high-energy electron diffraction. The junction and barrier layers in the junction are formed by atomic layer-by-layer deposition.
REFERENCES:
patent: 5047390 (1991-10-01), Higashino et al.
patent: 5227363 (1993-07-01), Furukawa et al.
patent: 5250817 (1993-10-01), Fink
Article by D. B. Schwartz et al., entitled "The Observation of the AC Josephson Effect in a YBa.sub.2 Cu.sub.3 O.sub.7 /Au/YBa.sub.2 Cu.sub.3 O.sub.7 Junction", published in IEEE Transactions on Magnetics, vol. 25, No. 2, Mar. 1989, pp. 1298-1299.
Article by C. T. Rogers, et al., entitled; "Fabrication of heteroepitaxial YBa.sub.2 Cu.sub.3 O.sub.7-x -PrBa.sub.2 Cu.sub.3 O.sub.7-x -YBa.sub.2 Cu.sub.3 O.sub.7-x Josephson devices grown by laser deposition" published in Appl. Phys. Lett. 55, Nov. 6, 1989, pp. 2032-2034.
Article by K. Mizung et al., entitled "Fabrication of Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8+.delta. /Bi.sub.2 Sr.sub.2 Nd.sub.1 Cu.sub.2 O.sub.8+.delta. /Bi.sub.2 Sr.sub.2 Ca.sub.1 Cu.sub.2 O.sub.8+.delta. Josephson Junctions", published in Japanese Journal of Applied Physics, on Sep. 1991, pp. L1559-L1561.
Article by K. Kimura et al., entitled "Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs", published in Japanese Journal of Applied Physics, on Mar. 1987, pp. L200-L202.
Article by J. Moreland et al., entitled "Evidence for the superconducting proximity effect in junctions between the YBa.sub.2 Cu.sub.3 O.sub.x thin film", published in Appl. Phys. Lettl. 54, on Apr. 10, 1989, pp. 1477-1479.
Article by R. B. Laibowits et al., entitled "All high T.sub.c edge junctions and SQUIDs", published in Appl. Phys. Lettl. 54, on Feb. 10, 1990, pp. 686-688.
Article by R. H. Koch et al., entitled "Quantum interference devices made from superconducting oxide thin films", published in Appl. Phys. Lettl. 51, on Jul. 20, 1987, pp. 200-202.
Article by J. Gao et al., entitled "Controlled preparation of all high-T.sub.c SNS-type edge junctions and DC SQIDs", published in Physics C 171, on 1990, pp. 126-130.
Article by J. Gao, titled "Characteristics of advanced YBa.sub.2 Cu.sub.3 O.sub.x -PrBa.sub.2 Cu.sub.3 O.sub.x /YBa.sub.2 Cu.sub.3 O.sub.x edge type junctions", published in Appl. Phys. Lettl. 59, on Nov. 18, 1991, pp. 2754-2756.
Article by K. Mjzuno, entitled "Fabrication of thin-film-type Josephson junctions using a Si-Sr-Ca-Cu-O/Bi-Sr-Cu-O/Bi-Sr-Cu-O structure", published in Appl. Phys. Lettl. 56, on Apr. 9, 1990, pp. 1469-1471.
Article by P. M. Mankiewich et al., entitled "Fabrication and Characterization of an YBa.sub.2 Cu.sub.3 O.sub.7 /AU/YBa.sub.2 Cu.sub.3 O.sub.7 S-N-S Microbridge", published in SPIE vol. 948 High-T.sub.c Superconductivity: Thin Films and Devices, on 1988, pp. 37-40.
Bozovic Ivan
Eckstein James N.
Klausmeier-Brown Martin E.
Virshup Gary F.
Crane Sara W.
Varian Associates Inc.
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