Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-08-30
2011-08-30
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S443100, C250S442110, C294S027100, C414S217000
Reexamination Certificate
active
08008637
ABSTRACT:
A semiconductor device fabrication apparatus includes a load lock chamber, a loading assembly in the load lock chamber, and an ion implantation target chamber that is hermetically connected to the load lock chamber. The load lock chamber is configured to store a plurality of wafer plates. Each wafer plate respectively includes at least one semiconductor wafer thereon. The ion implantation target chamber is configured to implant an ion species into a semiconductor wafer on a currently loaded wafer plate. The loading assembly is also configured to load a next one of the plurality of wafer plates from the load lock chamber into the ion implantation target chamber. The loading assembly may be configured to load the next wafer plate from the load lock chamber into the ion implantation target chamber while substantially maintaining a current temperature within the ion implantation target chamber and/or without depressurizing the ion implantation target chamber. Related methods and devices are also discussed.
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Cree Inc.
Myers Bigel Sibley & Sajovec P.A.
Wells Nikita
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