High temperature, high voltage SiC void-less electronic package

Details High temperature, high voltage SiC void-less electronic package High temperature, high voltage SiC void-less electronic package

2007-10-09

2008-10-14

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S676000, C257S787000, C257S792000, C257SE23002, C257SE23011, C257SE23124, C257SE23125

Reexamination Certificate

active

07435993

ABSTRACT:
An electronic package designed to package silicon carbide discrete components for silicon carbide chips. The electronic package allows thousands of power cycles and/or temperature cycles between −55° C. to 300° C. The present invention can also tolerate continuous operation at 300° C., due to high thermal conductivity which pulls heat away from the chip. The electronic package can be designed to house a plurality of interconnecting chips within the package. The internal dielectric is able to withstand high voltages, such as 1200 volts, and possibly up to 20,000 volts. Additionally, the package is designed to have a low switching inductance by eliminating wire bonds. By eliminating the wire bonds, the electronic package is able to withstand an injection mold.

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Written Opinion/Search Report, Mar. 18, 2008, Isa.

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