High-temperature Hg anneal for HgCdTe

Details High-temperature Hg anneal for HgCdTe High-temperature Hg anneal for HgCdTe

1984-03-21

1984-11-06

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148 15, C21D 174

Patent

active

044810440

ABSTRACT:
The dislocation density near the surface of Hg.sub.1-x Cd.sub.x Te alloys is substantially reduced by annealing the material at around 600.degree. C. in a mercury saturated ambient for periods of four hours or more, prior to post annealing at lower temperatures to control the metal vacancy concentration. This procedure allows dislocation reduction by climb, reduces the concentration of metal vacancies which can collapse to form dislocation loops or contribute to dislocation multiplication, and reduces tellurium precipitates which contribute to dislocation multiplication during subsequent post annealing.

REFERENCES:
patent: 3723190 (1973-03-01), Kruse et al.
patent: 3954518 (1976-05-01), Schmit et al.
patent: 3963540 (1976-06-01), Camp, Jr. et al.
patent: 3979232 (1976-09-01), Hager et al.
patent: 4028145 (1977-06-01), Kasenga
patent: 4116725 (1978-09-01), Shimuzu
patent: 4374684 (1983-02-01), Micklethwaite

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