High temperature hetero-epitaxial pressure sensor

Details High temperature hetero-epitaxial pressure sensor High temperature hetero-epitaxial pressure sensor

1986-08-01

1987-11-10

Edlow, Martin H.

Electrical resistors

Incased, embedded, or housed

Element in insulation with outer metallic sheath

357 26, 357 55, 338 2, 73727, 73777, H01L 29161

Patent

active

047061006

ABSTRACT:
A high-temperature hetero-epitaxial piezo-resistive pressure sensor in which an epitaxial layer of a wide-bandgap semiconductor such as GaAs is grown onto a silicon wafer and the piezoresistors are implanted into the wide-bandgap layer.

REFERENCES:
patent: 4003127 (1977-01-01), Jaffe
patent: 4054497 (1977-10-01), Marshall
patent: 4503709 (1985-03-01), Ruhle
patent: 4510671 (1985-04-01), Kurtz
patent: 4551394 (1985-11-01), Betsch
patent: 4654621 (1987-03-01), Sugiyama

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