High temperature gate drivers for wide bandgap semiconductor...

Details High temperature gate drivers for wide bandgap semiconductor... High temperature gate drivers for wide bandgap semiconductor...

2011-06-28

2011-06-28

Tran, Minh-Loan T (Department: 2826)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

C327S430000

Reexamination Certificate

active

07969226

ABSTRACT:
Gate drivers for wide bandgap (e.g., >2 eV) semiconductor junction field effect transistors (JFETs) capable of operating in high ambient temperature environments are described. The wide bandgap (WBG) semiconductor devices include silicon carbide (SiC) and gallium nitride (GaN) devices. The driver can be a non-inverting gate driver which has an input, an output, a first reference line for receiving a first supply voltage, a second reference line for receiving a second supply voltage, a ground terminal, and six Junction Field-Effect Transistors (JFETs) wherein the first JFET and the second JFET form a first inverting buffer, the third JFET and the fourth JFET form a second inverting buffer, and the fifth JFET and the sixth JFET form a totem pole which can be used to drive a high temperature power SiC JFET. An inverting gate driver is also described.

REFERENCES:
patent: 3700981 (1972-10-01), Masuhara et al.
patent: 3775693 (1973-11-01), Proebsting
patent: 4042839 (1977-08-01), Araki
patent: 4417162 (1983-11-01), Keller et al.
patent: 2007/0262793 (2007-11-01), Kapoor
patent: 2008/0080661 (2008-04-01), Tobita
Neaman, D.A., “Electrical Circuit Analysis and Design,” Irwin, 1996, pp. 934-936.
Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration, Dated Nov. 29, 2010; International Search Report, Dated Nov. 29, 2010; Written Opinion of the International Searching Authority, Dated Nov. 29, 2010.

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